SENSIndoor research presented at ICSCRM 2015

October 01, 2015

Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors – this is the title of a poster which has been accepted for presentation at the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM) taking place in Giardini Naxos, Italy, from October 4-9, 2015.

The poster features research jointly done by SENSIndoor partners from the University of Linköping, Sweden, and the University of Oulu, Finland. It will be exhibited on Wednesday, October 7, from 16:10 – 18:10.

The ICSCRM 2015 Conference is the key technical conference series for research in the field of electronics devices technology based on silicon carbide (SiC) and related materials. The full programme of the conference can be downloaded on the ICSCRM website.

Both the Division of Applied Sensor Science at the University of Linköping and the Functional Electroceramics Thin Film Group at the University of Oulu bring their extensive experience in researching material optimization, MOS and GasFET sensor devices to the SENSIndoor project.